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Freescale SemiconductorTechnical Data

Document Number: MHW8222BN

Rev. 6, 4/2006

LIFETIME BUYFeatures

•Specified for 77-, 110- and 128-Channel Loading•Excellent Distortion Performance•Silicon Bipolar Transistor Technology

•Unconditionally Stable Under All Load ConditionsApplications

•CATV Systems Operating in the 40 to 860 MHz Frequency Range•Input Stage Amplifier in Optical Nodes, Line Extenders and Trunk Distribution Amplifiers for CATV Systems

•Driver Amplifier in Linear General Purpose Applications

•Output Stage Amplifier on Applications Requiring Low Power DissipationDescription

•24 Vdc Supply, 40 to 860 MHz, CATV Forward Amplifier Module

•Replaced MHW8222B. There are no form, fit or function changes with thispart replacement.•RoHS Compliant

MHW8222BN860 MHz22.7 dB GAIN128-CHANNELCATV AMPLIFIER MODULECASE 1302-01, STYLE 1Table 1. Maximum Ratings

Rating

DC Supply Voltage

RF Input Voltage (Single Tone)Operating Case Temperature RangeStorage Temperature Range

SymbolVCCVinTCTstg

Value+28+70-20 to +100-40 to +100

UnitVdcdBmV°C°C

Table 2. Electrical Characteristics (VCC = 24 Vdc, TC = +30°C, 75 Ω system unless otherwise noted)

Characteristic

Frequency RangePower Gain

Slope (f = 40-860 MHz)Gain Flatness (Peak To Valley)Input/Output Return Loss @ f = 40 MHzDerate Return Loss @ f > 40 MHzComposite Second Order

(Vout = +38 dBmV/ch; 128 Channels)(Vout = +40 dBmV/ch; 110 Channels)(Vout = +44 dBmV/ch; 77 Channels)

(f = 40-860 MHz)f = 50 MHzf = 860 MHz

SymbolBWGpSGFIRL/ORLRLDCSO128CSO110CSO77

Min4021.421.80.1—20————

Typ—21.922.70.80.424—-68-64-65

Max86022.4241.50.6—0.009-60-61-62

UnitMHzdB——dBdB/MHzdBc

 Freescale Semiconductor, Inc., 2006. All rights reserved.MHW8222BN 1RF Device DataFreescale SemiconductorLAST ORDER 31 DEC 07LAST SHIP 30 JUN 08CATV Amplifier Module

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Table 2. Electrical Characteristics (VCC = 24 Vdc, TC = +30°C, 75 Ω system unless otherwise noted) (continued)

Characteristic

Cross Modulation Distortion

(Vout = +38 dBmV/ch, 128-Channel @ Fm = 55.25 MHz)(Vout = +40 dBmV/ch, 110-Channel @ Fm = 55.25 MHz)(Vout = +44 dBmV/ch, 77-Channel @ Fm = 55.25 MHz)Composite Triple Beat

(Vout = +38 dBmV/ch, 128-Channels, Worst Case)(Vout = +40 dBmV/ch, 110-Channels, Worst Case)(Vout = +44 dBmV/ch, 77-Channels, Worst Case)Noise Figure

f = 50 MHzf = 750 MHzf = 860 MHz

SymbolXMD128XMD110XMD77CTB128CTB110CTB77NF

Min—————————180

Typ-65-63-59-66-64-653.755.6220

Max-63-60-56

dBc

-64-61-624.56.57240

dBUnit

DC Current

IDC

mA

MHW8222BN 2

RF Device Data

Freescale Semiconductor

LAST ORDER 31 DEC 07LAST SHIP 30 JUN 08dBc

LIFETIME BUY元器件交易网www.cecb2b.com

PACKAGE DIMENSIONS

AZJASBVR2XQ0.010MTFMAMNOTES:

1.DIMENSIONS ARE IN INCHES.

2.INTERPRET DIMENSIONS AND TOLERANCESPER ASME Y14.5M, 1994.

INCHESMINMAX−−−1.775−−−1.085−−−0.8400.0150.0210.4650.5100.3000.3250.100 BSC0.156 BSC0.3150.3551.000 BSC0.165 BSC0.100 BSC0.1480.168−−−0.6001.500 BSC0.200 BSC−−−0.2500.435−−−0.400 BSC0.1520.1630.0090.011MILLIMETERSMINMAX−−−45.085−−−27.559−−−21.3360.3810.53311.81112.9547.628.2552.540 BSC3.962 BSC8.0019.01725.400 BSC4.191 BSC2.540 BSC3.7594.267−−−15.2438.100 BSC5.080 BSC−−−6.35011.049−−−10.160 BSC3.8614.1400.2290.279FFL2X2X6−32UNC−2BU0.010EMZTAM1235789NCEKZWDIMABCDEFGJKLNPQRSUVWXYZXT2X4XG7XDMPXTAMYM0.020X0.010MZTASTYLE 1:PIN 1.

2.3.4.5.6.7.8.9.

RF INPUTGROUNDGROUNDDELETEDVDC

DELETEDGROUNDGROUNDRF OUTPUT

CASE 1302-01ISSUE E

MHW8222BN

RF Device Data

Freescale Semiconductor

3

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Document Number: MHW8222BNRev. 6, 4/2006Information in this document is provided solely to enable system and softwareimplementers to use Freescale Semiconductor products. There are no express orimplied copyright licenses granted hereunder to design or fabricate any integratedcircuits or integrated circuits based on the information in this document.

Freescale Semiconductor reserves the right to make changes without further notice toany products herein. Freescale Semiconductor makes no warranty, representation orguarantee regarding the suitability of its products for any particular purpose, nor doesFreescale Semiconductor assume any liability arising out of the application or use ofany product or circuit, and specifically disclaims any and all liability, including withoutlimitation consequential or incidental damages. “Typical” parameters that may beprovided in Freescale Semiconductor data sheets and/or specifications can and dovary in different applications and actual performance may vary over time. All operatingparameters, including “Typicals”, must be validated for each customer application bycustomer’s technical experts. Freescale Semiconductor does not convey any licenseunder its patent rights nor the rights of others. Freescale Semiconductor products arenot designed, intended, or authorized for use as components in systems intended forsurgical implant into the body, or other applications intended to support or sustain life,or for any other application in which the failure of the Freescale Semiconductor productcould create a situation where personal injury or death may occur. Should Buyerpurchase or use Freescale Semiconductor products for any such unintended orunauthorized application, Buyer shall indemnify and hold Freescale Semiconductorand its officers, employees, subsidiaries, affiliates, and distributors harmless against allclaims, costs, damages, and expenses, and reasonable attorney fees arising out of,directly or indirectly, any claim of personal injury or death associated with suchunintended or unauthorized use, even if such claim alleges that FreescaleSemiconductor was negligent regarding the design or manufacture of the part.Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc.All other product or service names are the property of their respective owners. Freescale Semiconductor, Inc. 2006. All rights reserved.

Freescale SemiconductorRF Device DataMHW8222BN 4

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